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| S DM8401 S amHop Microelectronics C orp. Augus t , 2002 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 30V P R ODUC T S UMMAR Y (P -C hannel) V DS S -30V ID 6A R DS (ON) ( m W ) TYP ID -4.5A R DS (ON) ( m W ) TYP 18.5 @ V G S = 10V 25 @ V G S = 4.5V D1 8 38.5 @ V G S = -10V 57.5 @ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=125 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG N-C hannel P-C hannel 30 20 6.0 18.0 1.7 2.0 -55 to 150 -30 20 4.5 15 -1.7 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W 1 S DM8401 N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 16V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 9A VGS =4.5V, ID= 7A VDS = 10V, VGS = 10V VDS = 10V, ID = 20A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.5 18.5 25 40 16 950 420 110 3 V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 21 m ohm 32 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =15V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 2 VDD = 15V, ID = 1A, VGS = 10V, R GE N = 6 VDS =15V, ID =9A,VGS =10V VDS =15V, ID =9A,VGS =4.5V VDS =15V, ID = 9A, VGS =10V 7 30 14 54 25.2 5.12 4.8 35 12.1 14.6 ns ns ns ns nC nC nC nC S DM8401 P-Channel ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = -250uA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS =-10V, ID = -4.5A VGS =-4.5V, ID = -3.6A VDS = -5V, VGS = -10V VDS = -15V, ID = - 4.5A Min Typ C Max Unit -30 -1 V mA 100 nA -1 -1.5 38.5 57.5 -20 5 10 860 457 140 -3 V ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 53 m ohm 95 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =-15V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VD = -15V, R L = 15 ID = -1A, VGEN = -10V, R GE N = 6 VDS=-15V,ID=-4.9A,VGS=-10V VDS=-15V,ID=-4.9A,VGS=-4.5V VDS =-15V, ID = - 4.9A, VGS =-10V 3 9 10 37 23 15 8 3 4 20 40 90 110 20 10 ns ns ns ns nC nC nC nC S DM8401 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unles s otherwis e noted) Parameter Diode Forward Voltage S ymbol VSD Condition V G S = 0V, Is =1.7A N-C h V G S = 0V, Is =-1.7A P -C h Min Typ Max Unit 0.77 1.2 -0.80 -1.2 C DR AIN-SOUR CE DIODE CHAR ACTER ISTICS b V Notes a.S urface Mounted on FR 4 Board, t O10sec. b.Pulse Test:Pulse Width O 300gs, Duty Cycle O 2%. c.Guaranteed by design, not subject to production testing. N-C hannel 5 25 V G S =10,9,8,7,6,5,V 20 25 20 ID, Drain C urrent(A) 15 ID, Drain C urrent (A) 25 C 15 10 V G S =4V 5 10 T j=125 C 5 -55 C 0 0.0 0 0 0.5 1 1.5 2 2.5 3 1.0 2.0 3.0 4.0 5.0 6.0 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C har acter istics R DS (ON), On-R es is tance(Ohms ) 3000 2500 0.030 F igure 2. Tr ansfer C har acter istics V G S =10V 0.025 0.020 T j=125 C 0.015 25 C 0.010 0.005 0 -55 C C , C apacitance (pF ) 2000 1500 C is s 1000 500 0 0 5 10 15 20 25 30 C os s C rs s 0 5 10 15 20 V DS , Drain-to S ource Voltage (V ) ID, Drain C urrent(A) F igure 3. C apacitance F igure 4. On-R esistance Var iation with Dr ain C ur rent and Temper ature 4 S DM8401 N-C hannel 5 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.09 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 V DS=V GS ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=-250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 5. G ate T hr eshold V ar iation with T emper atur e 25 F igur e 6. B r eak down V oltage V ar iation with T emper atur e 40.0 gFS , T rans conductance (S ) Is , S ource-drain current (A) 20 20 15 10 5 0 0 5 10 V DS=15V 15 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) with Dr ain C ur r ent F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 5 S DM8401 P-C hannel 25 -V G S =10,9,8,7V 20 20 6V 16 5V -55 C 25 C T j=125 C -ID, Drain C urrent (A) -ID, Drain C urrent (A) 15 12 10 4V 5 0 3V 0 0.5 1.0 1.5 2.0 2.5 3.0 8 4 0 0 0.5 1 1.5 2 2.5 3 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C har acter istics F igure 2. Tr ansfer C har acter istics R DS (ON), On-R es is tance(Ohms ) (Normalized) 1500 1250 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 V G S =-10V ID=-4.9A C , C apacitance (pF ) 1000 750 500 250 0 C is s C os s C rs s 0 5 10 15 20 25 30 0 50 100 150 -V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R esistance Var iation with Temper ature 6 S DM8401 P-C hannel B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.09 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 V DS=V GS ID=-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -25 0 25 50 75 100 125 150 ID=250gA 5 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igur e 5. G ate T hr eshold V ar iation with T emper atur e 15 F igur e 6. B r eak down V oltage V ar iation with T emper atur e 20.0 V GS=0V gFS , T rans conductance (S ) 9 6 3 V DS=-15V 0 0 5 10 15 20 -Is , S ource-drain current (A) 12 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 -IDS , Drain-S ource C urrent (A) -V S D, B ody Diode F orward V oltage (V ) F igur e 7. T r ansconductance V ar iation with Dr ain C ur r ent F igur e 8. B ody Diode F or war d V oltage V ar iation with Sour ce C ur r ent 7 S DM8401 N-C hannel V G S , G ate to S ource V oltage (V ) 10 ID, Drain C urrent (A) 40 5 8 6 4 2 0 0 V DS=15V ID=9A 10 R (O DS N) L im it 10m 100 ms s 11 DC 1s 0.1 0.03 VGS =10V S ingle P ulse T A=25 C 0.1 1 10 30 50 4 8 12 16 20 24 28 32 Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igur e 9. G ate C har ge F igur e 10. M aximum Safe O per ating A r ea P-C hannel V G S , G ate to S ource V oltage (V ) 10 -ID, Drain C urrent (A) 50 8 6 4 2 0 0 V DS=-15V ID=-4.5A 10 R DS (O N) L im it 10m 100 ms s 11 DC 1s 0.1 0.03 VGS =-10V S ingle P ulse T A=25 C 0.1 1 10 50 3 6 9 12 15 18 21 24 Q g, T otal G ate C harge (nC ) -V DS , B ody Diode F orward V oltage (V ) F igur e 9. G ate C har ge F igur e 10. M aximum Safe O per ating A r ea 8 S DM8401 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 5 10% INVE R TE D S V IN 50% 10% 50% P ULS E WIDTH F igur e 11. Switching T est C ir cuit F igur e 12. Switching W avefor ms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 Duty C ycle=0.5 0.2 0.1 0.1 0.05 0.02 S ingle P uls e 0.01 10 -4 P DM t1 1. 2. 3. 4. 10 -2 t2 R cJ A (t)=r (t) * R cJ A R cJ A=S ee Datas heet T J M-T A = P DM* R cJ A (t) Duty C ycle, D=t1/t2 10 100 10 -3 10 -1 1 S quare Wave P uls e Duration (s ec) F igur e 13. Nor malized T her mal T r ansient I mpedance C ur ve 9 |
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